skip to content
A novel approach to investigate the reliability of titanium nitride/hafnium oxide/silicon dioxide/silicon gate stacks Preview this item
ClosePreview this item

A novel approach to investigate the reliability of titanium nitride/hafnium oxide/silicon dioxide/silicon gate stacks

Author: Richard G Southwick
Publisher: 2008.
Dissertation: M.S. Boise State University 2008
Edition/Format:   Thesis/dissertation : Thesis/dissertation : Manuscript   Archival Material : English
You are not connected to the Boise State University Albertsons Library network. Access to online content and services may require you to authenticate with your library. Authenticate here
Getting this item's online copy... Getting this item's online copy...

Find a copy in the library

Getting this item's location and availability... Getting this item's location and availability...

WorldCat

Find it in libraries globally
Worldwide libraries own this item

Details

Material Type: Thesis/dissertation, Manuscript
Document Type: Book, Archival Material
All Authors / Contributors: Richard G Southwick
OCLC Number: 427642676
Notes: Includes abstract.
Description: xxvii, 155 leaves : illustrations (some color) ; 29 cm
Responsibility: by Richard G. Southwick III.
Retrieving notes about this item Retrieving notes about this item

Reviews

User-contributed reviews

Tags

Be the first.
Confirm this request

You may have already requested this item. Please select Ok if you would like to proceed with this request anyway.

Close Window

Please sign in to WorldCat 

Don't have an account? You can easily create a free account.